| PART |
Description |
Maker |
| 3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
General Electric Solid State
|
| 3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Intersil
|
| 3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Vaishali Semiconductor
|
| 3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR 硅双绝缘栅场效应晶体
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 3N204 3N205 |
(3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors
|
GE Solid State
|
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| GT50G321 |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT10J321 GT10.321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
